THM1001TE Datasheet

IC型號(hào)：
THM1001TE
PDF描述：
SiGe HBT MMIC POWER AMPLIFIER
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PDF頁(yè)數(shù)：
9頁(yè)
芯片廠家：
TACHYONICS

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THM1001TE

SiGe HBT MMIC

POWER AMPLIFIER

Description

A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is

designed for 2.4GHz wireless applications including Bluetooth

Class 1 wireless

technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output

power, making it capable of overcoming insertion losses of up to 3.0dB between amplifier

output and antenna.

The silicon-germanium structure of the THM1001TE, and its exposed-die-pad

package, soldered to the system PCB, provide high thermal conductivity and a

subsequently low junction temperature.

Features

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+23 dBm at 44% Power Added Efficiency

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Temperature stability better than 1dB

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Power-control and Power-down modes

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Single 3.3 V Supply Operation

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Temperature Rating: -40C to +85C

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8 lead Exposed Pad MSOP8 Plastic Package

E_PAD MSOP8

Applications

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Bluetooth

Wireless Technology (Class 1)

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USB Dongles, modules

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PCMCIA, Flash cards

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Access Points

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2.4GHz cordless telephone

60-8, Gasan-dong, Kumchun-Gu

Gasan

Kumchun

Seoul, Korea. 153-023

153

Page 1

http://www.tachyonics.co.kr

http://

www.tachyonics.co.kr

Rev. 1.1

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