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TGF4240-SCC Datasheet

  • TGF4240-SCC

  • 179.64KB

  • 7頁

  • TriQuint

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Product Data Sheet
March 31, 2003
2.4 mm Discrete HFET
TGF4240-SCC
Key Features and Performance
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2400 碌m x 0.5 碌m HFET
Nominal Pout of 31.5 dBm at 8.5 GHz
Nominal Gain of 10.0 dB at 8.5 GHz
Nominal PAE of 56 % at 8.5 GHz
Frequency Range: DC - 12 GHz
Suitable for high reliability applications
0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
Primary Applications
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Cellular Base Stations
High-reliability space
Military
DESCRIPTION
The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12
GHz in Class A and Class AB operation.
Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy
attach methods as well as thermocompression and thermosonic wire-bonding
processes.
The TGF4240-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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TGF4240-SCC 產(chǎn)品屬性

  • TriQuint

  • 射頻GaAs晶體管

  • HEMT

  • 12 GHz

  • 10 dB at 8.5 GHz

  • 396 mS

  • 12 V

  • - 22 V

  • 588 mA

  • + 150 C

  • SMD/SMT

  • 6-Pin-Die

  • 31.5 dBm

  • 1004308

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