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TGF4230-EEU Datasheet

  • TGF4230-EEU

  • 1.2mm Discrete HFET

  • 7頁

  • TRIQUINT

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TGF4230-EEU
1.2mm Discrete HFET
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PHOTO ENLARGEMENT
1200 碌m X 0.5 碌m HFET
Nominal Pout of 28.5- dBm at 8.5- GHz
Nominal Gain of 10.0- dB at 8.5- GHz
Nominal PAE of 55% at 8.5 - GHz
4230
Suitable for High-Reliability Applications
0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)
DESCRIPTION
The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field
Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and
Class AB operation.
Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods
as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is
readily assembled using automatic equipment.
TriQuint Semiconductor, Inc.
鈥?/div>
Texas Facilities
鈥?(972) 995-8465
鈥?www.triquint.com

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