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TGF2021-01
Key Features and Performance
Frequency Range: DC - 12 GHz
> 30 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
1mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 75-125mA
(U
nder RF Drive, Id rises from 75mA to 240mA)
Chip Dimensions: 0.57 x 0.53 x 0.10 mm
(0.022 x 0.021 x 0.004 in)
Product Description
The TriQuint TGF2021-01 is a discrete
1 mm pHEMT which operates from
DC-12 GHz. The TGF2021-01 is
designed using TriQuint鈥檚 proven
standard 0.35um power pHEMT
production process.
The TGF2021-01 typically provides
> 30 dBm of saturated output power
with power gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-01
appropriate for high efficiency
applications.
The TGF2021-01 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2021-01 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
Primary Applications
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35
30
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Maximum Gain (dB)
25
MSG
20
15
10
5
0
0
2
4
6
8
10
12
14
16
MAG
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
TGF2021-01 產(chǎn)品屬性
TriQuint
射頻GaAs晶體管
pHEMT
12 GHz
11 dB
375 mS
12 V
- 14 V
300 mA
+ 150 C
SMD/SMT
4-Pin-Die
30 dBm
1031674
TGF2021-01相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
下載
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