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TGF1350 Datasheet

  • TGF1350

  • Discrete MESFET

  • 5頁(yè)

  • TRIQUINT

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Product Data Sheet
Discrete MESFET
TGF1350-SCC
Key Features and Performance
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0.5 um x 300 um FET
1.5 dB Noise Figure with 11dB
Associated Gain at 10 GHz
2.5 dB Noise Figure with 7 dB
Associated Gain at 18 GHz
All-gold Metallization for High Reliability
Recessed Gate Structure
Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The TGF1350-SCC is readily assembled using automated equipment. Die attach
should be accomplished with conductive epoxy only. Eutectic attach is not
recommended .
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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