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TGA1342-EPU Datasheet

  • TGA1342-EPU

  • 2 -20 GHz Wideband AGC Amplifier

  • 4頁

  • TRIQUINT

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Advance Product Information
2 -20 GHz Wideband AGC Amplifier
TGA1342-EPU
Key Features and Performance
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0.5 um MESFET Technology
9 dB Nominal Gain
3.5 dB NF Typical Midband
17.5 dBm Nominal Pout @ P1dB
Bias 5-8V @ 60 mA
Dimensions 3.378mm x 2.032mm
Primary Applications
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Typical Electrical Characteristics
S21 Gain (dB)
VD=5v Id=60ma Temp=25C
12.0
Gain (dB)
10.0
8.0
6.0
4.0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Input Return Loss (dB)
0.0
-10.0
-20.0
-30.0
-40.0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
S11 Input Return Loss (dB)
VD=5v Id=60ma Temp=25C
Wideband Gain Block Amplifier
Wideband Low Noise Amplifier
Noise Figure (dB)
VD=6v Id=60ma Temp=25C
Output Return Loss
(dB)
6.0
5.0
4.0
3.0
2.0
1.0
2
4
6
8
10
12
14
16
18
Frequency (GHz)
0.0
-10.0
-20.0
-30.0
-40.0
2
S22 Output Return Loss (dB)
VD=5v Id=60ma Temp=25C
Noise Figure (dBf)
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
rev 11/10/98

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