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TGA1319A Datasheet

  • TGA1319A

  • Ka Band Low Noise Amplifier

  • 3頁(yè)

  • TRIQUINT

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Advance Product Information
August 29, 2000
Ka Band Low Noise Amplifier
TGA1319A
Key Features and Performance
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0.15um pHEMT Technology
21-27 GHz Frequency Range
2 dB Nominal Noise Figure
19 dB Nominal Gain
12 dBm Pout
3V, 45 mA
Chip Dimensions 1.985 mm x .980 mm
Primary Applications
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Point-to-Point Radio
Point-to-Multipoint Communications
0
Preliminary Data, 2 Fixtured samples @ 25C
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
15
16
17
18
19
20
21
22
23
24
25
26
27
-4
-8
-12
-16
-20
15
16
17
18
19
20
21
22
23
24
25
26
Typical NF @ 25C
30
28
26
24
22
20
18
16
14
12
10
15
16
17
18
19
20
21
22
23
24
25
26
Typical S11 @ 25C
0
-5
-10
-15
-20
15
16
17
18
19
20
21
22
23
24
25
26
Typical Gain @ 25C
Typical S22 @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1

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