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TGA1172 Datasheet

  • TGA1172

  • 27 - 32 GHz 1W Power Amplifier

  • 4頁

  • TRIQUINT

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Advance Product Information
March 21, 2000
27 - 32 GHz 1W Power Amplifier
TGA1172
Key Features
鈥?/div>
0.25 um pHEMT Technology
鈥?/div>
18 dB Gain at 28 GHz
鈥?/div>
29 dBm Nominal P1dB
鈥?/div>
37dBm OTOI typical at 28GHz
鈥?/div>
Input/Output RL < -10 dB
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Bias 6 - 7V @ 630 mA
Chip Dimensions 2.69 mm x 1.37 mm
Small Signal Gain
15
10
Return Loss (dB)
)
g
(
25
Primary Applications
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Point-to-Point Radio
鈥?/div>
Point-to-Multipoint Communications
鈥?/div>
Ka Band Sat-Com
Vd1
Vg2
Vd2
Vg3
RF
OUT
Vd3
6V, 630 mA
5
0
-5
-10
-15
-20
10
15
S11
S21
15
5
Gain (dB)
-5
-15
-25
S22
20
25
30
35
-35
-45
40
RF
IN
600碌m
1200碌m
2400碌m
Vg1
Vd1
Vg2
Vd2
Vg3
Vd3
Amplifier Topology
Frequency (GHz)
Output Power at P1dB
32
30
29
28
27
26
25
26
27
28
29
30
31
32
Frequency (GHz)
Output TOI (dBm)
Output Third Order Intercept
40
39
38
37
36
35
34
33
32
31
30
26
27
28
29
30
31
P1dB (dBm)
6V, 630 mA
(
)
6V, 630 mA
31
32
33
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1

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