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TGA1135B Datasheet

  • TGA1135B

  • 18-27.5 GHz 1W Power Amplifier

  • 8頁

  • TRIQUINT

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Advance Product Information
Feb 4, 2000
18-27.5 GHz 1W Power Amplifier
TGA1135B
Key Features
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0.25 um pHEMT Technology
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14 dB Nominal Gain at 23GHz
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30 dBm Nominal P1dB
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38dBm OTOI typical
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Typical 15dB Input/Output RL
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Bias 6 - 7V @ 540 mA
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On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Primary Applications
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Point-to-Point Radio
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Point-to-Multipoint Communications
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Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data
Wafer 993150303, 6V/540mA
18
16
14
12
10
S21 (dB)
8
6
4
2
0
-2
-4
-6
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Frequency (GHz)
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
32
31.5
31
30.5
P1dB (dBm)
30
29.5
29
28.5
28
27.5
27
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
VD = 7V
VD = 6V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1

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