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TGA1082B Datasheet

  • TGA1082B

  • 27- 32 GHz 1.5 Watt Power Amplifier

  • 408.65KB

  • 3頁

  • TRIQUINT

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Advance Product Information
27- 32 GHz 1.5 Watt Power Amplifier
Key Features
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TGA1082B
Prototype Part #, Production Part # TBD
0.25 um pHEMT Technology
22 dB Nominal Gain at 30GHz
1W Nominal Pout @ P1dB
1.5W Psat at 30GHz
Bias 6 - 7V @ 960 mA
Chip Dimensions 4.13mm x 3.3mm
Primary Applications
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The TriQuint TGA1082B-EPU is a three stage
HPA MMIC design using TriQuint鈥檚 proven
0.25 um Power pHEMT process. The TGA1082B
is designed to support a variety of millimeter wave
applications including point-to-point digital radio
and LMDS/LMCS and Ka band satellite ground
terminals.
The TGA1082B provides 30 dBm nominal
output power at 1dB compression across
27-32GHz. Typical small signal gain is 22 dB
at 30GHz.
The TGA1082B requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
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P1dB (dBm)
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Frequency (GHz)
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Point-to-Point Radio
Point-to-Multipoint Communications
Ka Band Sat-Com
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Frequency (GHz)
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Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Gain (dB)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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