0.86 鈥?/div>
0.1
鹵
0.1
0.76
2.54
鹵
0.5
2.59
鹵
0.2
11.0
鹵
0.5
2.54
鹵
0.5
0.4
鹵
0.1
(1) (2) (3)
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
Weight: Approx. 1.5g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive surge peak on-state current
Critical rate-of-rise of on-state current
Peak forward gate current
Peak gate power loss
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge forward current
Junction temperature
Storage temperature
Symbol
V
DRM
I
TRM
di/dt
I
FGM
P
GM
P
G (AV)
V
RGM
I
FRM
Tj
Tstg
Ratings
600
430
1200
2.0
5.0
0.5
5
240
鈥?40 to +125
鈥?40 to +125
Unit
V
A
A/碌s
A
W
W
V
A
擄C
擄C
Conditions
Tj= 鈥?40 to +125擄C, R
GK
=1k鈩?/div>
V
D
430V, 100kcycle, Wp=1.3碌s, Ta=125擄C
V
50Hz, duty
50Hz, duty
50Hz
430V, 100kcycle, Wp=1.3碌s, Ta=125擄C
10%
10%
V
f
f
f
V
D
V
V
The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125擄C. This process shall be repeated up to 100K cycles.
Measurement circuit
L
Current waveform
(1cycle)
(Ta=25擄C)
V
D
Sample
G
1
C
G
2
100A/div
2碌s/div
sElectrical
Characteristics
Parameter
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Off-state current (1)
Off-state current (2)
Thermal resistance
Diode forward voltage
(Tj=25擄C)
Symbol
V
TM
V
GT
I
GT
V
GD
I
H
I
DRM
(1)
I
DRM
(2)
Rth
V
F
Ratings
min
typ
max
1.4
1.5
20
0.1
2
10.0
100
1
4.0
1.4
Unit
V
V
mA
V
mA
碌A(chǔ)
mA
擄C/W
V
I
T
=10A
Conditions
V
D
=6V, R
L
=10鈩?/div>
V
D
=6V, R
L
=10鈩?/div>
V
D
=480V, Tj=125擄C
R
G鈥揔
=1k鈩? Tj=25擄C
V
D
=V
DRM
, R
G鈥揔
=1k鈩? Tj=25擄C
V
D
=V
DRM
, R
G鈥揔
=1k鈩? Tj=125擄C
Junction to case
I
F
=10A
24
SANKEN
1
