0.45 鈥?/div>
0.1
鹵
0.2
3.9
鹵
0.2
2.54
2.2
鹵
0.2
2.54
2.4
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
Ratings
TF541S-A
400
400
500
500
5.0
7.8
80
2.0
10
5.0
5.0
0.5
鈥?40 to +125
鈥?40 to +125
1500
TF561S-A
600
600
700
700
Unit
V
V
V
V
A
A
A
A
V
V
W
W
擄C
擄C
V
Conditions
Tj= 鈥?0 to +125擄C, R
GK
=470鈩?/div>
50Hz Half-cycle sinewave, Continuous current, Tc=88擄C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125擄C
f
f
f
50Hz, duty
50Hz
50Hz, duty
10%
10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical
Characteristics
Parameter
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
Symbol
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
Ratings
min
typ
max
2.0
2.0
1.4
1.5
0.03
0.1
4.0
20
30
4.0
0.2
Unit
mA
mA
V
V
mA
V
mA
V/碌S
碌S
擄C/W
Conditions
Tj=125
擄C,
V
D
=V
DRM
(V
RRM
), R
GK
=1k鈩?/div>
T
C
=25
擄C,
I
TM
=10A
V
D
=6V, R
L
=10鈩? T
C
=25
擄C
V
D
=1/2
脳
V
DRM
, Tj=125
擄C,
R
GK
=1k鈩?/div>
R
GK
=1k鈩? Tj=25
擄C
V
D
=1/2
脳
V
DRM
, Tj=125
擄C,
R
GK
=1k鈩? C
GK
=0.033碌F
Tc=25
擄C
Junction to case
20
1
