TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Silicon Phototransistor
Description
TEMT1000 series are high speed and high sensitive
silicon NPN epitaxial planar phototransistors in SMD
package with dome lens. Due to integrated Daylight
filter devices are sensitive for IR radiation only.
TEMT1000
TEMT1020
TEMT1030
Features
鈥?High photo sensitivity
鈥?Fast response times
鈥?Angle of half sensitivity
蠒
= 鹵 15擄
TEMT1040
16757
鈥?Daylight filter matched to IR Emitters
(位 = 870 nm to 950 nm)
鈥?Versatile terminal configurations
鈥?Matched IR Emitter series: TSML1000
鈥?Lead-free component
鈥?Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Detector in electronic control and drive circuits
IR Detector for Daylight application
Photo interrupters
Counter
Encoder
Absolute Maximum Ratings
T
amb
= 25 擄C, unless otherwise specified
Parameter
Emitter Collector Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
鈮?/div>
5s
t
p
/T = 0.5, t
p
鈮?/div>
10 ms
T
amb
鈮?/div>
55 擄C
Test condition
Symbol
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
amb
T
sd
R
thJA
Value
5
50
100
100
100
- 40 to + 100
- 40 to + 85
< 260
400
Unit
V
mA
mA
mW
擄C
擄C
擄C
擄C
K/W
Basic Characteristics
T
amb
= 25 擄C, unless otherwise specified
T
amb
= 25 擄C, unless otherwise specified
Parameter
Collector Emitter Voltage
Collector-emitter dark current
Collector-emitter capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Test condition
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
Symbol
V
CEO
I
CEO
C
CEO
蠒
位
p
Min
70
1
3
鹵15
950
200
Typ.
Max
Unit
V
nA
pF
deg
nm
Document Number 81554
Rev. 1.5, 08-Mar-05
www.vishay.com
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