VISHAY
TEMD1000/1020/1030/1040
Vishay Semiconductors
Silicon PIN Photodiode
Description
TEMD1000 series are high speed silicon PIN photo-
diodes molded in SMT package with dome lens.
Due to integrated Daylight filter devices are sensitive
for IR radiation only.
High on axis sensitivity is provided by a viewing angle
of 鹵 15擄.
TEMD1000
TEMD1020
TEMD1030
TEMD1040
Features
鈥?Extra fast response times
鈥?Radiant sensitive area A = 0.25 mm
2
鈥?Daylight filter
鈥?Versatile terminal configurations
鈥?Package matched to IR Emitter series
TSMF1000 and TSML1000
鈥?Angle of half sensitivity
蠒
= 鹵 15擄
18029
Applications
High speed detector for SMT
IR Detector for Daylight application
Absolute Maximum Ratings
T
amb
= 25 擄C, unless otherwise specified
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Soldering Temperature
t
鈮?/div>
5s
T
amb
鈮?/div>
25 擄C
Test condition
Symbol
V
R
P
V
T
j
T
stg
T
stg
T
sd
Value
60
75
100
- 40 to + 100
- 40 to + 85
<260
Unit
V
mW
擄C
擄C
擄C
擄C
Basic Characteristics
T
amb
= 25 擄C, unless otherwise specified
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Reverse Light Current
Test condition
I
F
= 50 mA
I
R
= 100
碌A,
E = 0
V
R
= 10 V, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
位
= 870 nm, V
R
= 5 V
E
e
= 1 mW/cm
2
,
位
= 950 nm, V
R
= 5 V
Temp. Coefficient of I
ra
Absolute Spectral Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Document Number 81564
Rev. 9, 21-May-03
V
R
= 5 V,
位
= 870 nm
V
R
= 5 V,
位
= 870 nm
V
R
= 5 V,
位
= 950 nm
Symbol
V
F
V
(BR)
I
ro
C
D
I
ra
I
ra
TK
Ira
s(位)
s(位)
蠒
位
p
5
60
1
1.8
10
12
0.2
0.60
0.55
鹵15
900
10
Min
Typ.
1.0
Max
1.3
Unit
V
V
nA
pF
碌A
碌A
%/K
A/W
A/W
deg
nm
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