10A 300V 30ns
FRD
Type
TCU10A30
鈻燨UTLINE
DRAWING
妲嬮€?錛氭嫛鏁ｅ瀷銈楓儶銈熾兂銉€銈ゃ偑銉箋儔(FRD)
Diffusion type Silicon diode
Axial Lead Type
鐢ㄩ€?錛氬姏鐜囨敼鍠勭敤銈熾兂銉愩兗銈褲€併儊銉с儍銉戙伄楂樺懆娉㈡暣嫻佺敤
For Power Factor Improvement,
High frequency rectification
鈻?鏈€澶у畾鏍?/div>
MAXIMUM RATINGS(Ta錛?5鈩冿細(xì)unless otherwise specified)
Item
Symbol
Condition
Approx Net Weight:1.4g
Max. Rated value
Unit
銇忋倞榪斻仐銉斻兗銈€嗛浕鍦?/div>
Repetitive peak reverse voltage
V
RRM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
50Hz
姝ｅ雞鍏ㄦ嘗 1 銈點(diǎn)偆銈儷 闈炪亸銈婅繑銇?/div>
50Hz full sine wave 1cycle, non-repetitive
300
50Hz
姝ｅ雞鍏ㄦ嘗,鎶墊姉璨犺嵎
Tc =
109鈩?/div>
50Hz full sine wave , Resistance load
V
A
A
A
鈩?/div>
鈩?/div>
騫沖潎鏁存祦闆繪祦
Average rectified forward current
10
11.1
100
鈭?0鈭鹼紜150
鈭?0鈭鹼紜150
瀹熷姽闋嗛浕嫻?/div>
R.M.S. forward current
銈點(diǎn)兗銈擱爢闆繪祦
Surge forward current
鍕曪拷½錕芥帴鍚堟俯搴︾瘎鍥?/div>
Operating junction temperature range
淇濆瓨娓╁害綃勫洸
Storage temperature range
鈻?闆繪皸鐨勩兓鐔辯殑鐗規(guī)€?/div>
Item
ELECTRICAL / THERMAL CHARACTERISTICS
Symbol
Condition
Min.
Typ.
Max.
Unit
銉斻兗銈€嗛浕嫻?/div>
Peak reverse current
I
RM
V
FM
V
RM
=V
RRM
I
FM
=5A
I
FM
=5A
Tj=25鈩?/div>
Tj=25鈩?/div>
Tj=25鈩?/div>
1
绱犲瓙銇傘仧銈?/div>
per diode
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
1.12
19
鈭?/div>
25
1.30
30
3
渭A
V
ns
鈩?W
銉斻兗銈爢闆誨湩
Peak forward voltage
1
绱犲瓙銇傘仧銈?/div>
per diode
閫嗗洖寰╂檪闁?/div>
Reverse recovery time
錕?frac12;錕?/div>
rr
R
th(j-c)
鈭抎i/dt=50A/渭s
鐔辨姷鎶?/div>
Thermal resistance
鎺ュ悎閮ㄣ兓銈便兗銈歸枔
Junction to case
TCU10A30相關(guān)型號(hào)PDF文件下載
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英文版
Diffusion type Silicon diode
NIEC
-
英文版
Diffusion type Silicon diode
NIEC [Niho...
-
英文版
FRD - For Power Factor Improvement High Frequency Rectificat...
NIEC [Niho...
-
英文版
FRD - For Power Factor Improvement High Frequency Rectificat...
NIEC [Niho...
-
英文版
FRD - For Power Factor Improvement High Frequency Retificati...
NIEC [Niho...
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