R.-.061300
TCS800
800 Watts, 50 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 MHz, with the pulse
width and duty required for TCAS applications. The device has gold thin-film
metallization and diffused ballasting for proven highest MTTF. The transistor
includes input and output prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55SM Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25擄C
1
1944
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65
Emitter to Base Voltage (BV
ebo
)
3.5
50
Collector Current (I
c
)
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+230
W
V
V
A
擄C
擄C
ELECTRICAL CHARACTERISTICS @ 25擄C
SYMBOL
P
out
P
in
P
g
畏
c
R
L
Pd
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Input Return Loss
Pulse Droop
Load Mismatch Tolerance
F = 1030 MHz
TEST CONDITIONS
F = 1030 MHz
V
CC
= 50 Volts
PW = 32
碌sec
DF = 1%
MIN
800
120
8.0
9.0
45
-12
0.5
4:1
TYP
MAX
UNITS
W
W
dB
%
dB
dB
FUNCTIONAL CHARACTERISTICS @ 25擄C
BV
ebo
*
BV
ces
h
FE
*
胃jc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC 鈥?Current Gain
Thermal Resistance
Ie = 70 mA
Ic = 100 mA
Vce = 5V, Ic = 5A
3.5
65
20
0.09
V
V
擄C/W
NOTE 1: At rated output power and pulse conditions.
*: Not measureable due to internal EB returns
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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