TC58V64BDC
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
TM
64-MBIT (8M
麓
8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia
DESCRIPTION
)
The TC58V64B is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E
2
PROM) organized as 528 bytes
麓
16 pages
麓
1024 blocks. The device has a 528-byte
static register which allows program and read data to be transferred between the register and the memory cell
array in 528-byte increments. The Erase operation is implemented in a single block unit (8 Kbytes
+
256 bytes: 528
bytes
麓
16 pages).
The TC58V64B is a serial-type memory device which utilizes the I/O pins for both address and data input/output
as well as for command inputs. The Erase and Program operations are automatically executed making the device
most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras
and other systems which require high-density non-volatile memory data storage.
The data stored in the TC58V64BDC needs to comply with the data format standardized by the SSFDC Forum in
order to maintain compatibility with other SmartMedia
TM
systems.
FEATURES
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Organization
Memory cell array
528
麓
16K
麓
8
Register
528
麓
8
Page size
528 bytes
Block size
(8K
+
256) bytes
Modes
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read
Mode control
Serial input/output, Command control
Complies with the SmartMedia
TM
Electrical
Specification and Data Format Specification
issued by the SSFDC Forum
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Power supply
V
CC
=
3.3 V
鹵
0.3 V
Program/Erase Cycles
1E5 cycle (with ECC)
Access time
Cell array-register
25
ms
max
Serial Read cycle
50 ns min
Operating current
Read (50-ns cycle)
10 mA typ.
Program (avg.)
10 mA typ.
Erase (avg.)
10 mA typ.
Standby
100
mA
max
Package
FDC-22A (Weight: 1.8 g typ.)
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PIN ASSIGNMENT
(TOP VIEW)
V
SS
CLE ALE
PIN NAMES
I/O1 to I/O8
CE
WE
WP
I/O1 I/O2 I/O3 I/O4 V
SS
V
SS
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Ground Input
Low Voltage Detect
Power supply
Ground
TM
WE
RE
CLE
ALE
WP
1
2
3
4
5
6
7
8
9 10 11
RY/BY
GND
LVD
22 21 20 19 18 17 16 15 14 13 12
V
CC
V
SS
V
CC
CE
RE
RY/BY GND LVD I/O8 I/O7 I/O6 I/O5 V
CC
is a trademark of Toshiba Corporation.
000707EBA2
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TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the 鈥淗andling
Guide for Semiconductor Devices,鈥?or 鈥淭OSHIBA Semiconductor Reliability Handbook鈥?etc..
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The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (鈥淯nintended Usage鈥?. Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer鈥檚 own risk.
2001-10-24
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