TC55V4000ST-70,-85
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT STATIC RAM
DESCRIPTION
The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V
power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3
mA/MHz and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 0.5
碌A(chǔ)
standby
current (at V
DD
=
3 V, Ta
=
25擄C) when chip enable ( CE ) is asserted high. There are two control inputs. CE is
used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. This
device is well suited to various microprocessor system applications where high speed, low power and battery
backup are required. The TC55V4000ST is available in a normal pinout plastic 32-pin thin-small-outline package
(TSOP).
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low-power dissipation
Operating: 10.8 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.6 V
Power down features using CE
Data retention supply voltage of 1.5 to 3.6 V
Direct TTL compatibility for all inputs and outputs
Standby Current (maximum):
3.6 V
3.0 V
7
碌A(chǔ)
5
碌A(chǔ)
鈥?/div>
Access Times (maximum):
TC55V4000ST
-70
Access Time
CE
Access Time
OE
Access Time
-85
85 ns
85 ns
45 ns
70 ns
70 ns
35 ns
鈥?/div>
Package:
TSOP鈪?2-P-0.50 (ST)
(Weight: 0.24 g typ)
PIN ASSIGNMENT (TOP VIEW)
32 PIN TSOP
16
1
PIN NAMES
A0~A18
R/W
OE
CE
Address Inputs
Read/Write Control
Output Enable
Chip Enable
Data Inputs/Outputs
Power
Ground
I/O1~I/O8
V
DD
GND
17
32
(Normal pinout)
Pin No.
Pin Name
Pin No.
Pin Name
1
A11
17
A3
2
A9
18
A2
3
A8
19
A1
4
A13
20
A0
5
R/W
21
I/O1
6
A17
22
I/O2
7
A15
23
I/O3
8
V
DD
24
GND
9
A18
25
I/O4
10
A16
26
I/O5
11
A14
27
I/O6
12
A12
28
I/O7
13
A7
29
I/O8
14
A6
30
CE
15
A5
31
A10
16
A4
42
OE
2001-11-30
1/10
next
TC55V4000ST-85相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
1 μA Low Dropout Positive Voltage Regulator
-
英文版
IC,SRAM,1KX4,CMOS,DIP,18PIN,PLASTIC
Toshiba
-
英文版
2,048 WORD X 8 BIT CMOS STATIC RAM
TOSHIBA
-
英文版
2,048 WORD X 8 BIT CMOS STATIC RAM
TOSHIBA [T...
-
英文版
8,192 WORD X 8 BIT CMOS STATIC RAM
TOSHIBA
-
英文版
8,192 WORD X 8 BIT CMOS STATIC RAM
TOSHIBA [T...
-
英文版
65,536 bit static random access memory organized as 8,192 wo...
TOSHIBA
-
英文版
65,536 bit static random access memory organized as 8,192 wo...
TOSHIBA [T...
-
英文版
TC5588J_Toshiba.pdf
Toshiba
-
英文版
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TOSHIBA
-
英文版
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
TOSHIBA [T...
-
英文版
2,048 WORD X 8 BIT CMOS STATIC RAM
TOSHIBA
-
英文版
2,048 WORD X 8 BIT CMOS STATIC RAM
TOSHIBA [T...
-
英文版
2,048 WORD X 8 BIT CMOS STATIC RAM
TOSHIBA
-
英文版
2,048 WORD X 8 BIT CMOS STATIC RAM
TOSHIBA [T...
-
英文版
32,768 WORD x 9 BIT CMOS STATIC RAM
TOSHIBA
-
英文版
32,768 WORD x 9 BIT CMOS STATIC RAM
TOSHIBA [T...
-
英文版
32,768 WORD x 9 BIT CMOS STATIC RAM
TOSHIBA
-
英文版
32,768 WORD x 9 BIT CMOS STATIC RAM
TOSHIBA [T...
-
英文版
524,228 WORDS x 8 BIT STATIC RAM
TOSHIBA