鈮?/div>
18 V
Lg = 0.6
碌m,
Wg = 5 mm
100 % DC Tested
Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT)
chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are
100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range
power amplifier for commercial applications including Cellular/PCS systems, and military high
performance power amplifier.
ELECTRICAL SPECIFICATIONS (T
A
=25
擄
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
BV
DGO
R
th
CONDITIONS
Output Power at 1dB Gain Compression Point ,
f
= 2.45GHz
V
DS
= 8 V, I
DS
= 600 mA
Linear Power Gain,
f
= 2.45GHz
V
DS
= 8 V, I
DS
= 600 mA
Intercept Point of the 3
rd
-order Intermodulation,
f
= 2.45GHz
V
DS
= 8 V, I
DS
= 600 mA, *P
SCL
= 20 dBm
Power Added Efficiency at 1dB Compression Power,
f
= 2.45GHz
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 10 mA
Drain-Gate Breakdown Voltage at I
DGO
=2.5 mA
Thermal Resistance
MIN
32.5
12
TYP
33
14
43
43
1.2
850
-1.7**
18
7
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
擄C/W
15
Note: * P
SCL
: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement
(1)TC2696P1519 : Vp = -1.5V to -1.9V (2)TC2696P1620 : Vp = -1.6V to -2.0V (3)TC2696P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
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2
