The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs
Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high
performance package. All devices are 100% DC tested to assure consistent quality. Typical applications
include high dynamic range power amplifier for commercial applications including Cellular/PCS systems,
and military high performance power amplifier.
鈩?/div>
Symbol
P
1dB
G
1dB
IP3
PAE
I
DSS
g
m
V
P
BV
DGO
R
th
CONDITIONS
Output Power at 1dB Gain Compression Point ,
f
= 6GHz
V
DS
= 8 V, I
DS
= 300 mA
Power Gain at 1dB Gain Compression ,
f
= 6GHz
V
DS
= 8 V, I
DS
= 300 mA
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6GHz
V
DS
= 8 V, I
DS
= 300 mA, *P
SCL
= 17 dBm
Power Added Efficiency at 1dB Compression Power,
f
= 6GHz
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 4.8 mA
Drain-Gate Breakdown Voltage at I
DGO
=1.2 mA
Thermal Resistance
MIN
29.5
TYP
30
11
40
43
600
400
-1.7**
18
16
MAX
UNIT
dBm
dB
dBm
dB
mA
mS
Volts
Volts
擄C/W
15
* P
SCL
: Output Power of Single Carrier Level
** For the tight control of the pinch-off voltage range, we divide TC2571 into 3 model numbers to fit customer design requirement
(1)TC2571P1519 : Vp = -1.5V to -1.9V (2)TC2571P1620 : Vp = -1.6V to -2.0V (3)TC2571P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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