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TC255P Datasheet

  • TC255P

  • 336- 】 244-pixel ccd image sensor

  • 243.24KB

  • 18頁

  • TI

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TC255P
336-
脳
244-PIXEL CCD IMAGE SENSOR
SOCS057 鈥?JUNE 1996
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Medium-Resolution, Solid-State Image
Sensor for Low-Cost B/W TV Applications
324(H) x 243(V) Active Elements in Image
Sensing Area
10-碌m Square Pixels
Fast Clear Capability
Electronic Shutter Function From
1/60鈥?/50000 s
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . 66 dB Typical
High Sensitivity
High Blue Response
8-Pin Dual-In-Line Plastic Package
4-mm Image-Area Diagonal
Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
High Photoresponse Uniformity
DUAL-IN-LINE PACKAGE
(TOP VIEW)
IAG2
ABG
1
8
ADB
2
7
IAG1
SUB
3
6
SAG
OUT
4
5
SRG
description
The TC255P is a frame-transfer charge-coupled device (CCD) designed for use in B/W NTSC TV and special-
purpose applications where low cost and small size are desired.
The image-sensing area of the TC255P is configured in 243 lines with 336 elements in each line. Twelve
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.
The sensor can be operated in a noninterlace mode as a 324(H) by 243(V) sensor with low dark current. The
device can also be operated in an interlace mode, electronically displacing the image-sensing elements during
the charge integration in alternate fields, and effectively increasing the vertical resolution and minimizing
aliasing.
One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for
an electronic-shutter function comparable to interline-transfer and frame-interline-transfer sensors without the
loss of sensitivity and resolution inherent in those technologies.
The charge is converted to signal voltage with a 12-碌V per electron conversion factor by a high-performance
charge-detection structure with built-in automatic reset and a voltage-reference generator. The signal is
buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability.
The TC255P uses TI-proprietary virtual-phase technology, which provides devices with high blue response, low
dark signal, high photoresponse uniformity, and single-phase clocking. The TC255P is characterized for
operation from 鈥?0擄C to 45擄C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies
available from Texas Instruments.
Copyright
漏
1996, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
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DALLAS, TEXAS 75265
2-1

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