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Medium-Resolution, Solid-State Image
Sensor for Low-Cost Color TV Applications
324(H) x 243(V) Active Elements in Image
Sensing Area
10-碌m Square Pixels
Small Size
Low Cost
Fast Clear Capability
Electronic Shutter Function From
1/60鈥?/50000 s
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . 66 dB Typical
High Sensitivity
High Blue Response
8-Pin Dual-In-Line Plastic Package
4-mm Image-Area Diagonal
Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
DUAL-IN-LINE PACKAGE
(TOP VIEW)
IAG2
ABG
1
8
ADB
2
7
IAG1
SUB
3
6
SAG
OUT
4
5
SRG
description
The TC254P is a frame-transfer charge-coupled device (CCD) designed for use in color NTSC TV and special-
purpose applications requiring low cost and small size.
The image-sensing area of the TC254P is configured in 243 lines with 336 elements in each line. Twelve
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.
The sensor can be operated in a non-interlace mode as a 324(H) by 243(V) square color pixel mode by
alternately averaging two red pixels for red pixels and two blue pixels for blue pixels. Because the human eye
is most sensitive to the green light wavelength, the 324脳 243 resolution is preserved due to the orientation of
the green pixels in the Bayer mosaic color filter pattern.
The device can also be operated in a 162(H) by 121(V) square color pixel mode by utilizing a separate red, two
averaged greens, and a blue pixel for each color pixel. In this mode, true interlaced video is possible, effectively
increasing the vertical resolution, by performing a one pixel shift during the off-chip video processing.
One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for
an electronic shutter function comparable to interline-transfer and frame-interline-transfer sensors without the
loss of sensitivity and resolution inherent in those technologies.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies
available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1998, Texas Instruments Incorporated
POST OFFICE BOX 655303
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DALLAS, TEXAS 75265
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