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TC245 Datasheet

  • TC245

  • 786- 】 488-pixel ccd image sensor

  • 19頁

  • TI

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TC245
786-
脳
488-PIXEL CCD IMAGE SENSOR
SOCS019A 鈥?DECEMBER 1991
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High-Resolution, Solid-State Image Sensor
for NTSC B/W TV Applications
8-mm Image-Area Diagonal, Compatible
With 1/2鈥?Vidicon Optics
755 (H) x 242 (V) Active Elements in
Image-Sensing Area
Advanced On-Chip Signal Processing
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 70 dB
High Sensitivity
High Photoresponse Uniformity
High Blue Response
Single-Phase Clocking
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
DUAL-IN-LINE PACKAGE
(TOP VIEW)
SUB 1
IAG 2
ABG 3
ADB 4
OUT3 5
OUT2 6
OUT1 7
AMP GND 8
CDB 9
SUB 10
NC 鈥?No internal connection
20
19
18
17
16
15
14
13
12
11
SUB
IAG
ABG
SAG
SRG3
SRG2
SRG1
NC
TRG
IDB
description
The TC245 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W
NTSC TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC245 is configured into 242 lines with 786 elements in each line. Twenty-nine
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
in alternate fields by one-half of a vertical line during the charge integration period, effectively increasing the
vertical resolution and minimizing aliasing. The device can also be operated as a 755 (H) by 242 (V)
noninterlaced sensor with significant reduction in the dark signal.
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip
converts charge to signal voltage. The signal is further processed by a low-noise, state-of-the-art correlated
clamp-sample-and-hold circuit. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability. The image is read out through three outputs, each of which reads out every
third image column.
The TC245 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark signal, good uniformity, and single-phase clocking. The TC245 is characterized for operation
from 鈥?0擄C to 45擄C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies
available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1991, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
2-1

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    60.8 MM 5 X 8 DOT MATRIX DISPLAYS
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