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TC2320TG Datasheet

  • TC2320TG

  • N- and P- Channel Enhancement-Mode Dual MOSFET

  • 3頁

  • SUPERTEX   SUPERTEX

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TC2320
TC2320
N- and P- Channel Enhancement-Mode Dual MOSFET
BV
DSS
/BV
DGS
N-Channel
200V
P-Channel
-200V
R
DS(ON)
(max)
N-Channel
7.0
P-Channel
12
Order Number/Package
SO-8
TC2320TG
Features
鉂?/div>
Low threshold
鉂?/div>
Low on resistance
鉂?/div>
Independent, electrically isolated N- and P-channels
鉂?/div>
Low input capacitance
鉂?/div>
Fast switching speeds
鉂?/div>
Free from secondary breakdowns
鉂?/div>
Low input and output leakage
Low Threshold DMOS Technology
The Supertex TC2320TG consist of a high voltage low threshold N-
channel and P-channel MOSFET in an SO-8 package. These low
threshold enhancement-mode (normally-off) transistors utilize an
advanced vertical DMOS structure and Supertex鈥檚 well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex鈥檚 vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Application
鉂?/div>
Medical Ultrasound Transmitters
鉂?/div>
High voltage pulsers
鉂?/div>
Amplifiers
鉂?/div>
Buffers
鉂?/div>
Piezoelectric transducer drivers
鉂?/div>
General purpose line drivers
鉂?/div>
Logic level interfaces
Package Option
S1
1
N-Channel
BV
DSS
BV
DGS
鹵20V
-55擄C to +150擄C
300擄C
8
7
6
P-Channel
D1
D1
D2
D2
Absolute Maximum Ratings*
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*Distance of 1.6mm from case for 10 seconds.
G1
S2
G2
2
3
4
5
SO-8 Package
(top view)
04/23/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1

TC2320TG 產品屬性

  • Supertex

  • MOSFET

  • N and P-Channel

  • 200 V

  • +/- 20 V

  • Dual Dual Drain

  • + 150 C

  • SMD/SMT

  • SO-8

  • Reel

  • 15 ns

  • - 55 C

  • 15 ns

  • 2000

  • 25 ns at N Channel, 20 ns at P Channel

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