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TC215 Datasheet

  • TC215

  • 1024- 】 1024-PIXEL CCD IMAGE SENSOR

  • 19頁(yè)

  • TI

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TC215
1024-
脳
1024-PIXEL CCD IMAGE SENSOR
SOCS014B 鈥?AUGUST 1989 鈥?REVISED DECEMBER 1991
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High-Resolution, Solid-State
Frame-Transfer Image Sensor
17.2-mm Image-Area Diagonal
1000 (H) x 1018 (V) Active Elements in
Image-Sensing Area
Square Pixels
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 60 dB
High Sensitivity
High Photoresponse Uniformity
High Blue Response
Single-Phase Clocking
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
DUAL-IN-LINE PACKAGE
(TOP VIEW)
OUT1
AMP GND
OUT2
ADB
SUB
RST2
RST1
CDB
SRG1
SRG2
TRG
IDB
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
ABG2
IAG2
ABG1
IAG1
SUB
TDB
SUB
SUB
IAG1
ABG1
IAG2
ABG2
description
The TC215 is a full-frame charge-coupled-device (CCD) image sensor that provides very high-resolution image
acquisition for image-processing applications such as robotic vision, medical X-ray analysis, and metrology. The
image format measures 12 mm horizontally by 12.216 mm vertically; the image-area diagonal is 17.2 mm. The
image-area pixels are 12-碌m square. The image area contains 1018 active lines with 1000 active pixels per line.
Six additional dark reference lines give a total of 1024 lines in the image area, and 24 additional dark reference
pixels per line give a total of 1024 pixels per horizontal line.
The full-frame image sensor should be used with a shutter or with strobed illumination to prevent smearing of
the image during readout. To prepare the imaging area for image capture, the photoelectric charge that has
accumulated in the image pixels can be transferred into the clearing drain in one millisecond. After image
capture (integration time), the readout is accomplished by transferring the charge, one line at a time, into two
serial registers, each of which contains 512 data elements and 12 dummy elements. The typical serial-register
clocking rate is 10 megapixels per second. Operating the TC215 at the typical data rate of one field per frame
generates video output at a continuous 15 frames per second.
Gated floating-diffusion detection structures are used with each serial register to convert charge to signal
voltage. External reset allows the application of off-chip correlated clamp sample-and-hold amplifiers for
low-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise,
two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels per
second when combined off chip. At room temperature, the readout noise is 55 electrons and a minimum dynamic
range of 60 dB is available.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies
available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1991, Texas Instruments Incorporated
POST OFFICE BOX 655303
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DALLAS, TEXAS 75265
2-1

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