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TC213 Datasheet

  • TC213

  • 1024- 】 512-pixel ccd image sensor

  • 21頁

  • TI

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TC213
1024-
脳
512-PIXEL CCD IMAGE SENSOR
SOCS013B 鈥?AUGUST 1989 鈥?REVISED DECEMBER 1991
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High-Resolution, Solid-State
Frame-Transfer Image Sensor
13.5-mm Image-Area Diagonal
1000 (H)
脳
510 (V) Active Elements in
Image-Sensing Area
Square Pixels
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 60 dB
High Sensitivity
High Photoresponse Uniformity
High Blue Response
Single-Phase Clocking
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
DUAL-IN-LINE PACKAGE
(TOP VIEW)
OUT1
AMP GND
OUT2
ADB
SUB
RST2
RST1
CDB
SRG1
SRG2
TRG
IDB
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
ABGS
SAG
ABGI
IAG
SUB
TDB
SUB
SUB
IAG
ABGI
SAG
ABGS
description
The TC213 is a frame-transfer charge-coupled device (CCD) image sensor that provides very high-resolution
image acquisition for image-processing applications such as robotic vision, medical X-ray analysis, and
metrology. The image format measures 12.00 mm horizontally by 6.12 mm vertically; the image-area diagonal
is 13.5 mm. The image-area pixels are 12-碌m square. The image area contains 510 active lines with 1000 active
pixels per line. Two additional dark reference lines give a total of 512 lines in the image area, and 24 additional
dark-reference pixels per line give a total of 1024 pixels per horizontal line.
The storage section of the TC213 contains 512 lines with 1024 pixels per line. This area is protected from
exposure to light by an aluminum light shield. Photoelectric charge that is generated in the image area of the
TC213 can be transferred into the storage section in less than 500
碌s.
After image capture (integration time),
the readout is accomplished by transferring the charge, one line at a time, into two serial registers located below
the storage area, each of which contains 512 data elements and 12 dummy elements. One serial-register clocks
out charge that is generated in the odd-numbered columns of pixels in the imaging area; the other serial-register
processes charge from the even-numbered columns of the imaging area. The typical serial-register data rate
is 10 megapixels per second. Three transfer gates are used to isolate the serial registers. If the storage area
or storage and image areas need to be cleared of all charge, charge may be quickly transferred across the serial
registers and into the clearing drain, which is located below the serial-register section.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies
available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1991, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
2-1

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