鈮?/div>
9 V
Lg = 0.25
碌m,
Wg = 600
碌m
All-Gold Metallization for High Reliability
100 % DC Tested
DESCRIPTION
The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond
pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T
A
=25
擄
C)
Symbol
NF
G
a
P
1dB
G
L
I
DSS
g
m
V
P
BV
DGO
R
th
CONDITIONS
Noise Figure at V
DS
= 4 V, I
DS
= 50 mA,
f
= 12GHz
Associated Gain at V
DS
= 4 V, I
DS
= 50 mA,
f
= 12GHz
Output Power at 1dB Gain Compression Point ,
f
= 12GHz
V
DS
= 6 V, I
DS
= 80 mA
Linear Power Gain,
f
= 12GHz
V
DS
= 6 V, I
DS
= 80 mA
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 1.2 mA
Drain-Gate Breakdown Voltage at I
DGO
=0.3 mA
Thermal Resistance
MIN
9
TYP
0.8
10
24
10
11
180
200
-1.0*
12
22
MAX
1.0
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
擄C/W
PHOTO ENLARGEMENT
9
* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement
(1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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