LITE-ON
SEMICONDUCTOR
TC0640H thru TC3500H
Bi-Directional
VDRM
IPP
-
58 to 320
Volts
-
100
Amperes
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 100A @ 10/1000us or 400 @
8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
SMC
SMC
A
DIM.
A
B
C
B
C
D
E
MIN.
6.60
5.59
2.92
0.15
7.75
0.05
2.01
0.76
MAX.
7.11
6.22
3.18
0.31
8.13
0.20
2.62
1.52
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
G
H
E
F
D
F
G
H
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
SYMBOL
VALUE
UNIT
A
A
鈩?/div>
鈩?/div>
I
PP
I
TSM
T
J
T
STG
100
50
-40 to +150
-55 to +150
THERMAL RESISTANCE
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
SYMBOL
VALUE
UNIT
鈩?/div>
/W
鈩?/div>
/W
%/
鈩?/div>
Rth
(J-L)
Rth
(J-A)
鈻?/div>
V
BR
/
鈻?/div>
T
J
20
100
0.1
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
PP
(A)
500
400
250
200
160
100
I
PP
, PEAK PULSE CURRENT (%)
100
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
50
Half value
0
tr
tp
TIME
REV. 0, 03-Dec-2001, KSWC02
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