R.-.101199
TAN 350
350 Watts, 50 Volts, Pulsed
Avionics 960 鈥?1215 MHz
GENERAL DESCRIPTION
The
TAN 350
is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55ST Style 1
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
1450
Device Dissipation @25!C (P
d
)
Voltage and Current
65
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
2.0
40
Collector Current (I
c
)
Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+230
W (At rated pulse condition)
V
V
A
!C
!C
ELECTRICAL CHARACTERISTICS @ 25!C
!
SYMBOL
P
out
P
in
P
g
#
c
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 960 鈥?1215 MHz
V
CC
= 50 Volts
PW = 10
"sec
DF = 10%
F = 1090 MHz
MIN
350
70
7.0
38
3:1
7.5
40
TYP
MAX
UNITS
W
W
dB
%
FUNCTIONAL CHARACTERISTICS @ 25!C
!
BV
ebo
BV
ces
h
FE
$jc
2
Emitter to Base Breakdown
Collector to Emitter
Breakdown
DC 鈥?Current Gain
Thermal Resistance
Ie = 25 mA
Ic = 50 mA
Ic = 1A, Vce = 5V
2.0
65
10
.12
!C/W
V
V
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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