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T835-600B Datasheet

  • T835-600B

  • HIGH PERFORMANCE TRIACS

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
T810-xxxB
T835-xxxB
HIGH PERFORMANCE TRIACS
FEATURES
I
TRMS
= 8 A
SENSITIVE GATE : I
GT
鈮?/div>
10mA and 35mA
HIGH COMMUTATION TECHNOLOGY
HIGH I
TSM
CAPABILITY
A2
DESCRIPTION
The T810-xxxB and T835-xxxB series are using
high performance TOPGLASS PNPN technology.
These devices are intented for AC control applica-
tions, using surface mount technology where high
commutating and surge performances are re-
quired (like power tools, Solid State Relay).
A2
A1
DPAK
(Plastic)
G
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
I
TSM
I
2
t
dI/dt
Parameter
RMS on-state current
(360擄 conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25擄C )
I
2
t value for fusing
Critical rate of rise of on-state current
I
G
= 50mA di
G
/dt = 0.1A/碌s
Tc =110
擄C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
Tstg
Tj
T
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10 s
Value
8
85
80
32
20
100
- 40 to + 150
- 40 to + 125
260
擄C
擄C
擄C
A
2
s
A/碌s
Unit
A
A
Symbol
Parameter
T810-/T835-
400B
600B
600
Unit
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125
擄C
400
V
May 1998 Ed : 1A
1/5

T835-600B 產(chǎn)品屬性

  • T835 View All Specifications

  • 75

  • 分離式半導體產(chǎn)品

  • 三端雙向可控硅開關(guān)

  • Snubberless™

  • 可控硅 - 無緩沖器

  • 600V

  • 8A

  • 1.3V

  • 80A，84A

  • 35mA

  • 35mA

  • 單一

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • D-Pak

  • 管件

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