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T830-700W Datasheet

  • T830-700W

  • SNUBBERLESS TRIAC

  • 111.17KB

  • 5頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
T820-xxxW
T830-xxxW
SNUBBERLESS TRIAC
FEATURES
s
s
s
s
s
I
TRMS
= 8 A
V
DRM
= V
RRM
= 600V to 800V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V
(RMS)
U.L. RECOGNIZED : E81734
A
2
A
1
G
DESCRIPTION
The T820/830W triacs use high performance glass
passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESS
TM
concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
G
A1
A2
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
TSM
RMS on-state current
(360擄 conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25擄C )
Parameter
Tc= 95擄C
tp = 16.7 ms
(1 cycle, 60 Hz)
tp = 10 ms
(1/2 cycle, 50 Hz)
I
2
t
dI/dt
I
2
t Value (half-cycle, 50 Hz)
Critical rate of rise of on-state current
Gate supply : I
G
= 500 mA
dI
G
/dt = 1 A/碌s.
tp = 10 ms
Repetitive
F = 50 Hz
Non Repetitive
T
stg
T
j
Tl
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
Parameter
600
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125擄C
600
Value
8
88
100
50
20
100
- 40 to + 150
- 40 to + 125
260
擄C
擄C
A
2
s
A/碌s
Unit
A
A
Symbol
T820 / T830-xxxW
700
700
800
800
Unit
V
September 2001 - Ed: 1A
1/5

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