SEMICONDUCTOR
TECHNICAL DATA
FEATURES
Repetitive Peak Off-state Voltage : V
DRM
=600V.
R.M.S On-State Current : I
T(RMS)
=3A.
High Commutation (dv/dt)
Isolation Voltage : V
ISOL
=1500V AC
(UL Recognized : E166398)
U
E
T3A6CI
Bi-Directional Triode Thyristor
3A Mold TRIAC
A
C
S
DIM
A
B
C
D
E
F
R
T
APPLICATIONS
Switching Mode Power Supply
Speed Control of Small Motors
Solid State Relay
Light Dimmer
Washing Machine
Temperature Control of Heater
L
L
M
D
D
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
V
N
T
N
T
H
O
Q
1
2
3
MILLIMETERS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
12.30 MAX
0.75 MAX
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
25
5
0.5
2.60 0.15
F
G
J
1. T1
2. T2
K
B
P
3. GATE
TO-220IS
MAXIMUM RATINGS (Ta=25
)
SYMBOL
V
DSM
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
I
GM
T
j
T
stg
V
ISOL
-40
-40
RATING
700
600
3
30 (50Hz 1 Cycle)
33 (60Hz 1 Cycle)
4.5
3
0.3
10
1
125
125
V
UNIT
V
V
A
A
A
2
S
W
W
V
A
CHARACTERISTIC
Non-Repetitive Peak Off-state Voltage
Repetitive Peak Off-state Voltage
R.M.S On-state Current
(Full Sine Waveform Tc=105 )
Peak One Cycle Surge On-state Current
(Non-Repetitive)
I
2
t Limit Value (1mS t 10mS)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (Ac, t=1min.)
1500
2001. 1. 3
Revision No : 0
1/3