鈥?/div>
Device Marking: Logo, Device Type, e.g., T2800D, Date Code
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Peak Repetitive Off鈥揝tate Voltage(1)
(TJ = 鈥?0 to +125擄C, Gate Open)
On鈥揝tate RMS Current
(All Conduction Angles, TC = +80擄C)
Peak Non鈥揜epetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = +80擄C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width = 10
碌s,
TC = +80擄C)
Average Gate Power (t = 8.3 ms,
TC = +80擄C)
Peak Gate Current
(Pulse Width = 10
碌s,
TC = +80擄C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM,
VRRM
IT(RMS)
ITSM
Value
400
8.0
100
Unit
Volts
Amps
Amps
4
http://onsemi.com
TRIACS
8 AMPERES RMS
400 VOLTS
MT2
G
MT1
I2t
PGM
PG(AV)
IGM
TJ
Tstg
40
16
0.35
4.0
鈥?40 to
+125
鈥?40 to
+150
A2s
Watts
Watt
Amps
1
2
3
TO鈥?20AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
擄C
擄C
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
T2800D
Package
TO220AB
Shipping
500/Box
漏
Semiconductor Components Industries, LLC, 1999
1
February, 2000 鈥?Rev. 3
Publication Order Number:
T2800/D