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T2500DG Datasheet

  • T2500DG

  • Silicon Bidirectional Thyristors

  • 4頁

  • ONSEMI

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T2500D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
Features
http://onsemi.com
鈥?/div>
Blocking Voltage 400 V
鈥?/div>
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
鈥?/div>
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
鈥?/div>
High Surge Current Capability 60 A Peak at T
C
= 80擄C
鈥?/div>
Pb鈭扚ree Package is Available*
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Peak Repetitive Off鈭扴tate Voltage (Note 1)
(Sine Wave 50 to 60 Hz,
T
J
= 鈭?0 to +100擄C, Gate Open)
On鈭扴tate RMS Current (T
C
= +80擄C)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non鈭抮epetitive Surge Current
(One Full Cycle, 60 Hz, T
C
= +80擄C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power
(T
C
= +80擄C, Pulse Width = 10
msec)
Average Gate Power
(T
C
= +80擄C, t = 8.3 ms)
Peak Gate Current (Pulse Width = 10
msec)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Value
400
Unit
V
TRIACS
6 AMPERES RMS
400 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
6.0
60
15
16
0.2
4.0
鈭?0 to +125
鈭?0 to +150
A
A
A
2
s
W
W
A
擄C
擄C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb鈭扚ree Package
1
T2500DG
AYWW
TO鈭?20AB
CASE 221A
STYLE 4
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction鈭抰o鈭扖ase
Maximum Lead Temperature for Soldering
Purposes 1/8鈥?from Case for 10 Seconds
Symbol
R
qJC
T
L
Max
2.7
260
Unit
擄C/W
擄C
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
, V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
T2500D
T2500DG
Package
TO220AB
TO220AB
(Pb鈭扚ree)
Shipping
500 Units / Box
500 Units / Box
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
1
April, 2006 鈭?Rev. 4
Publication Order Number:
T2500/D

T2500DG 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • 三端雙向可控硅開關(guān)

  • -

  • 標(biāo)準(zhǔn)

  • 400V

  • 6A

  • 2.5V

  • 60A @ 60Hz

  • 25mA

  • 30mA

  • 單一

  • 通孔

  • TO-220-3

  • TO-220AB

  • 散裝

  • T2500DGOS

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