EE-SY110/113/171
Compact Reflective Phototransistor
Output
Low-profiled model with an overall
height of only 3 mm (EE-SY171)
Models with a circuit integrated into
molded housing provide special cost
advantages (EE-SY110/113)
Model with a filter reduces effects of
external visible light (EE-SY113)
Ordering Information
Appearance Sensing method Sensing Sensing object
distance
Reflective
3.5 mm
4.4 mm
5 mm
White paper with
reflection factor
of 90%
Output
configuration
Weight
Part number
EE-SY171
EE-SY113
EE-SY110
Phototransistor 0.3 g
Approx. 0.5 g
Approx. 0.4 g
Specifications
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Item
Input
Forward current
Pulse forward current
Reverse voltage
Output
Collector-emitter voltage
Collector current
Collector dissipation
Ambient temperature
Operating
Storage
Symbol
I
F
I
FP
V
R
V
CEO
I
C
P
C
Topr
Tstg
Rated value
50 mA*
1 A**
4V
30 V
20 mA
100 mW*
-40擄C to 85擄C (-40擄F to 185擄F)
-40擄C to 85擄C (-40擄F to 185擄F)
*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.
**This value was measured with a pulse width of 10
碌s
and a repeating frequency of 100 Hz.