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SXH-189 Datasheet

  • SXH-189

  • 5-2000 MHz Medium Power GaAsHBT Amplifier

  • 282.81KB

  • 6頁

  • STANFORD

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Preliminary
Preliminary
Product Description
Stanford Microdevices鈥?SXH-189 amplifier is a high efficiency
GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed
in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 5-2000 MHz cellular,
ISM, WLL and narrowband PCS applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
SXH-189
5-2000 MHz Medium Power
GaAsHBT Amplifier
Product Features
鈥?/div>
Patented High Reliability GaAs HBT Technology
鈥?/div>
High 3rd Order Intercept : +39 dBm typ.
鈥?/div>
at 1960 MHz
Surface-Mountable Power Plastic Package
Typical IP3, P1dB, Gain
45
40
35
30
25
20
15
10
5
0
IP3
IP3
dBm
P1dB
Gain(dB)
P1dB
Gain(dB)
Applications
鈥?/div>
PCS, Cellular Systems
鈥?/div>
High Linearity IF Amplifiers
850 MHz
1960 MHz
Symbol
P
1dB
S
21
S
11
IP
3
NF
Parameters: Test Conditions:
Z
0
= 50 Ohms, Ta = 25C
Output Power at 1dB Compression
Small signal gain
Input VSWR
Third Order Intercept Point
Noise Figure
f = 850 MHz
f =1960 MHz
f = 850 MHz
f =1960 MHz
f = 850 MHz
f =1960 MHz
f = 850 MHz
f =1960 MHz
f = 850 MHz
f =1960 MHz
V s = 8V
Rbias = 27 ohms
Vdevice
祿
5V
Units
dB m
dB m
dB
dB
-
dB m
dB m
dB
dB
mA
擄 C/W
Min.
Typ.
23.0
23.0
Max.
17.5
19.5
14.0
1.5:1
1.9:1
39.0
39.0
5.0
5.0
I
d
R
th
, j-l
Device Current
Thermal Resitance (junction - lead)
80
100
108
130
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user鈥檚 own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101247 Rev D
1

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  • 英文版
    5-2000 MHz Medium Power GaAsHBT Amplifier
    STANFORD
  • 英文版
    5-2000 MHz Medium Power GaAsHBT Amplifier
    STANFORD [...

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