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SXA-389 Datasheet

  • SXA-389

  • 400-2500 MHz  W Medium Power GaAs HBT Amplifier with Activ...

  • 7頁

  • ETC

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Product Description
Sirenza Microdevices鈥?SXA-389 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 400-2500 MHz
cellular, ISM, WLL, PCS, W-CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
SXA-389
400-2500 MHz 錄 W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
鈥?On-chip Active Bias Control, Single 5V Supply
鈥?High Output 3rd Order Intercept:
+42 to +44 dBm typ.
鈥?High P1dB : +25 dBm typ.
鈥?High Gain: +19 dB at 850 MHz
鈥?High Efficiency: consumes only 600 mW
鈥?Patented High Reliability GaAs HBT Technology
鈥?Surface-Mountable Power Plastic Package
Typical IP3, P1dB, Gain
50
45
40
35
30
OIP3
P1dB
Gain
dBm
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
2450 MHz
Applications
鈥?W-CDMA, PCS, Cellular Systems
鈥?High Linearity IF Amplifiers
鈥?Multi-Carrier Applications
Units
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
V cc = 5 V
Min.
Typ.
25
25
25
25
19
14
13.5
13
1.3:1
1.4:1
1.3:1
1.1:1
43
44
42
42
4.7
5.5
6.0
6.0
90
115
575
100
122
610
Max.
Symbol
Parameters: Test Conditions:
Z
0
= 50 Ohms, Ta = 25擄C
Output Power at 1dB Compression
P
1dB
dB m
24
S
21
Small signal gain
dB
12.5
15
S
11
Input VSWR
-
OIP
3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
dB m
39
NF
Noise Figure
dB
I
D
P
DISS
R
th
, j-l
Device Current
Operating Dissipated Power
Thermal Resistance (junction - lead)
mA
mW
擄 C/W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user鈥檚 own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102231 Rev C
1

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