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SXA-289 Datasheet

  • SXA-289

  • 5-2000 MHz Medium Power GaAsHBT Amplifier

  • 6頁

  • STANFORD

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Preliminary
Product Description
Stanford Microdevices鈥?SXA-289 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 5-2000 MHz
cellular, ISM, WLL and narrowband PCS applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
SXA-289
5-2000 MHz Medium Power
GaAsHBT Amplifier
Product Features
鈥?/div>
Patented High Reliability GaAs HBT Technology
鈥?/div>
High Output 3rd Order Intercept : +41.5 dBm typ.
鈥?/div>
at 1960 MHz
Surface-Mountable Power Plastic Package
Typical IP3, P1dB, Gain
45
40
35
30
25
20
15
10
5
0
IP3
IP3
dBm
P1dB
Gain(dB)
P1dB
Gain(dB)
Applications
鈥?/div>
PCS, Cellular Systems
鈥?/div>
High Linearity IF Amplifiers
850 MHz
1960 MHz
Symbol
P
1dB
S
21
S
11
IP
3
NF
Parameters: Test Conditions:
Z
0
= 50 Ohms, Ta = 25C
Output Power at 1dB Compression
Small signal gain
Input VSWR
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
Noise Figure
f = 850 MHz
f = 1960 MHz
f = 850 MHz
f = 1960 MHz
f = 850 MHz
f = 1960 MHz
f = 850 MHz
f = 1960 MHz
f = 850 MHz
f = 1960 MHz
V s = 8V
Rbias = 27 ohms
Vdevice = 5 V typ.
Units
dB m
dB m
dB
dB
-
dB m
dB m
dB
dB
mA
擄 C/W
Min.
Typ.
24.0
24.0
Max.
18.0
20.0
15.0
1.3:1
1.7:1
21.5
38.0
40.5
41.5
5.0
5.7
I
d
R
th
, j-l
Device Current
Thermal Resistance (junction - lead)
85
105
108
120
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user鈥檚 own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100622 Rev E
1

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  • 英文版
    5-2000 MHz Medium Power GaAsHBT Amplifier
    STANFORD
  • 英文版
    5-2000 MHz Medium Power GaAs HBT Amplifier
    SIRENZA
  • 英文版
    5-2000 MHz Medium Power GaAsHBT Amplifier
    STANFORD [...
  • 英文版
    400-2500 MHz  W Medium Power GaAs HBT Amplifier with Activ...
    ETC
  • 英文版
    400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier with Acti...
    SIRENZA
  • 英文版
    400-2500 MHz  W Medium Power GaAs HBT Amplifier with Activ...
    ETC [ETC]
  • 英文版
    400-2500 MHz  W Medium Power GaAs HBT Amplifier with Activ...
    SIRENZA
  • 英文版
    400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier with Acti...
    SIRENZA
  • 英文版
    400-2500 MHz Balanced 1/2 W Medium Power GaAs HBT Amplifier ...
    ETC
  • 英文版
    400-2500 MHz Balanced 1/4 W Medium Power GaAs HBT Amplifier ...
    SIRENZA
  • 英文版
    400-2500 MHz Balanced 1/2 W Medium Power GaAs HBT Amplifier ...
    ETC [ETC]
  • 英文版
    400-2500 MHz  W Medium Power GaAs HBT Amplifier with Activ...
    SIRENZA
  • 英文版
    400-2500 MHz Balanced 1/4 W Medium Power GaAs HBT Amplifier ...
    SIRENZA

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