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High Linearity IF Amplifiers
850 MHz
1960 MHz
Symbol
P
1dB
S
21
S
11
IP
3
NF
Parameters: Test Conditions:
Z
0
= 50 Ohms, Ta = 25C
Output Power at 1dB Compression
Small signal gain
Input VSWR
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
Noise Figure
f = 850 MHz
f = 1960 MHz
f = 850 MHz
f = 1960 MHz
f = 850 MHz
f = 1960 MHz
f = 850 MHz
f = 1960 MHz
f = 850 MHz
f = 1960 MHz
V s = 8V
Rbias = 27 ohms
Vdevice = 5 V typ.
Units
dB m
dB m
dB
dB
-
dB m
dB m
dB
dB
mA
擄 C/W
Min.
Typ.
24.0
24.0
Max.
18.0
20.0
15.0
1.3:1
1.7:1
21.5
38.0
40.5
41.5
5.0
5.7
I
d
R
th
, j-l
Device Current
Thermal Resistance (junction - lead)
85
105
108
120
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user鈥檚 own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100622 Rev E
1