SPDT High Isolation Terminated Switch
0.5 - 3.0 GHz
SW-475
Features
n
Positive Voltage Control (0 / +5 V)
n
High Isolation (53 dB typ. @ 0.9 GHz,
Functional Schematic
16
15
14
13
50 dB typ @ 1.9 GHz)
n
50-Ohm Internal Terminations
n
Low Insertion Loss (0.6 dB typ. @ 0.9 GHz,
0.7 dB typ. @ 1.9 GHz)
n
4 mm FQFP-N 16-Lead Package
RF2
1
2
3
RFC
4
V1
V2
5
6
RF1
12
11
10
9
Description
The M/A-COM SW-475 GaAs monolithic switch provides
high isolation in a low-cost, plastic surface mount package.
The SW -475 is ideal for applications across a broad range
of frequencies including synthesizer switching, transmit /
receive switching, switch matrices and filter banks in
systems such as radio and cellular equipment, PCS, GPS,
and fiber optic modules.
M/A-COM fabricates the SW-475 using an 0.5-micron gate
length MESFET process. The process features full chip
passivation for performance and reliability.
7
8
PIN Configuration
Pin Function Description Pin Function Description
17
GND
RF ground
鈥?/div>
鈥?/div>
鈥?/div>
1
2
3
4
5
6
7
8
RF2
GND
GND
V1
V2
GND
RFC
GND
RF port
RF ground
RF ground
Control 1
Control 2
RF ground
RF port
RF ground
(pad)
16
15
14
13
12
11
10
9
GND
GND
GND
GND
RF1
GND
GND
GND
RF ground
RF ground
RF ground
RF ground
RF port
RF ground
RF ground
RF ground
Handling Procedures
The following precautions should be observed to avoid
damage:
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and
can be damaged by static electricity. Use proper ESD
precautions when handling these devices.
Truth Table
Mode
(Control)
Positive
1
Negative
2
V1
0
1
V2
1
0
RFC -
RF1
ON
OFF
RFC -
RF2
OFF
ON
Logic Level
V
LO
鈥?鈥?=
V
HIGH
1鈥?=
Voltage Level
0 鹵 0.2 V
V
C
鹵 0.2 V
1. External DC blocking capacitors required on all RF ports.
We recommend 47 pF.
2. 3.0 V < VC < 8.0 V.
1
2
3
4
