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Ordering number : EN5767

Hyperabrupt Junction Type GaAs Varactor Diode

SVD102

X Band VCO, PLO

Features

鈥?High Q.

鈥?High capacitance ratio.

Package Dimensions

unit: mm

1274

[SVD102]

1 : Cathode

2 : Anode

Specifications

Absolute Maximum Ratings

at Ta=25擄C

Parameter

Peak Reverse Voltage

Average Rectified Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Mounting Temperature

Symbol

V

rm

I

fm

P

D

Tj

Tstg

Tm

Conditions

Ratings

30

50

500

150

鈥?5 to +150

230/10s

Unit

V

mA

mW

擄C

擄C

擄C

Electrical Characteristics

at Ta=25擄C

Parameter

Forward Voltage

Reverse Voltage

Reverse Current

Interterminal Capacitance

Capacitance Ratio

Symbol

V

F

V

R

I

R

C

t0V

C

j0V

/ C

j25V

I

F

=10mA

I

R

=10碌A(chǔ)

V

R

=25V

V

R

=0V, f=1MHz

V

R

=0V, 25V, f=1MHz

5

5

7

8

鈥?7

100

Conditions

Ratings

min

typ

max

1.4

Unit

V

V

nA

pF

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

90597GI (KOTO) No.5767-1/2

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