Ordering number :EN4275A
SVC364
Diffused Junction Type Sillicon Diode
Composite Varactor Diode for AM Receiver
Low-Voltage Electronic Applications
Features
路 Excellent matching characteristics because of
composite type.
路 Manufacturing processes reducible and automatic
mounting supported.
路 High capacitance ratio and high quality factor.
路 Cathodes separated in RF and OSC.
路 Tape reel packaging.
路 Surface mount type.
Package Dimensions
unit:mm
1214A
[SVC364]
1:Anode1
2:Cathode2
3:Anode2
4:Anode3
5:Cathode2
6:Anode4
SANYO:MFP6
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Conditions
Ratings
16
125
鈥?5 to +125
Unit
V
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Breakdown Voltage
Reverse Current (One diode)
Interterminal Capacitance (Average)
Symbol
V(BR)R
IR
C1V
C6V
C8V
Quality Factor
Capacitance Ratio
Matching Tolerance
Q
CR
鈭咰
m*2
IR=10碌A(chǔ)
VR=9V
VR=1V, f=1MHz*1
VR=6V, f=1MHz
VR=8V, f=1MHz
VR=1V, f=1MHz
C1V/C8V
VR=1V to 8V, f=1MHz
20.5
200
17.5
24.5
鹵2.5
%
428.0*
52.0
27.0
Conditions
Ratings
min
16
100
500.0*
typ
max
Unit
V
nA
pF
pF
pF
Note)*1:1MHz signal:20mVrms.
Note)*2:鈭咰m= (CDn鈥揅D3) / CD3
脳100
Note)*:The SVC364 is classified by C1V as follows:
Electrical Connection
Rank
K
L
M
C1V(pF)
428.0 to 456.5
447.5 to 478.0
468.5 to 500.0
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/92794MO/8-8099/3202HK No.4275-1/3
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