Ordering number:EN2819D
SVC351
Diffused Junction Type Silicon Diode
Composite Varactor Diode for
AM Receiver Electronic Tuning Use
Features
路 Execellent matching characteristics because of
composite type.
路 The number of manufacturing processes can be
reduced and automatic mounting is possible because
of composite type.
路 High capacitance ratio and high quality factor.
Package Dimensions
unit:mm
1194B
[SVC351]
Electrical Connection
1:Anode1
2:Cathode
3:Anode2
4:Cathode
5:Anode3
SANYO:SIP5
1:Anode1
2:Cathode
3:Anode2
4:Cathode
5:Anode3
SANYO:SIP5
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Conditions
Ratings
16
125
鈥?5 to +125
Unit
V
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Breakdown Voltage
Reverse Current (One diode)
Interterminal Capacitance (Average)
Symbol
V(BR)R
IR
C1V
C6V
C8V
Quality Factor
Capacitance Ratio
Matching Tolerance
Q
CR
鈭?/div>
Cm*2
IR=10碌A(chǔ)
VR=9V
VR=1V, f=1MHz*1
VR=6V, f=1MHz
VR=8V, f=1MHz
VR=1V, f=1MHz
C1V/C8V, f=1MHz
VR=1 to 8V, f=1MHz
428.0*
48.0
20.5
200
16.5
23.5
鹵2.5
%
Conditions
Ratings
min
16
100
500.0*
65.0
27.0
typ
max
Unit
V
nA
pF
pF
pF
*1 : 1MHz signal : 20 Vrms
*2 :
鈭咰m=(C
Dn
-C
D3
)/C
D3
脳100
* : The SVC 351 is classified by C
1V
as follows:
Rank
K
L
M
C1V(pF)
428.0 to 456.5
447.5 to 478.0
468.5 to 500.0
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/2179MO, TS No.2819-1/3
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2
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