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Ordering number : EN2195F

Diffused Junction Type Silicon Diode

SVC203CP

Varactor Diode for FM Low-Voltage

Electronic Tuning Use

Features

鈥?Dual type with a good linearity of C-V characteristic. Excels in large input characteristics.

鈥?Small-sized package (CP) usable in ultrasmall-sized sets (surface mount type).

鈥?Applicable to FM wide band due to high capacitance ratio (VR=1.5 to 9V).

Absolute Maximum Ratings

at Ta=25擄C

Reverse Voltage

Junction Temperature

Storage Temperature

VR

Tj

Tstg

16

125

鈥?5 to +125

min

16

typ

unit

V

擄C

擄C

max

50

65.98

25.11

13.40

unit

V

nA

pF

pF

pF

Electrical Characteristics

at Ta=25擄C

Breakdown Voltage

Reverse Current

Interterminal Capacitance*

V(BR)R

IR

C1.0V

C6.0V

C9.0V

Q

CR

鈭咰m

Quality Factor

Capacitance Ratio

Matching Tolerance

IR=1碌A(chǔ)

VR=10V

VR=1.0V, f=1MHz

58.80

VR=6.0V, f=1MHz

18.72

VR=9.0V, f=1MHz

10.84

VR=3.0V, f=1MHz

60

C1.0V/C9.0V

4.6

VR=1.0V (Cmax

|C

min)

脳100

VR=6.0V

Cmin

VR=9.0V

6.5

5.5

11.8

%

%

%

* : Capacitance value of one diode

Electrical Connection

Package Dimensions

1169A

(unit : mm)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

O0397GI/52595GI (KOTO)1200MO/O268MO/6187AT, TS 8-9952 No.2195-1/3

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