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SUY50N03-10CP Datasheet

  • SUY50N03-10CP

  • N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

  • 5頁

  • VISHAY   VISHAY

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SUY50N03-10CP
New Product
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
FEATURES
D
TrenchFETr Power MOSFETS
D
PWM Optimized for High Efficiency
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
APPLICATIONS
I
D
(A)
a
15
18
r
DS(on)
(W)
0.010 @ V
GS
= 10 V
0.012 @ V
GS
= 4.5 V
D
Buck Converter
鈥?High Side
鈥?Low Side
D
Synchronous Rectifier
鈥?Secondary Rectifier
D
TO-251
Notes:
1. Drain Connected to Tab
G
D
S
2. Leads Trimmed to 0.092鈥?/div>
"
0.003鈥?/div>
Top View
Order Number:
SUY50N03-10CP
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
T
C
= 25_C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 100_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
30
"20
15
14
100
20
71
b
8.3
a
鈥?5 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes:
a
Surface mounted on 1鈥?x 1鈥?FR4 Board, t
v
10 sec.
b
See SOA curve for voltage derating.
Document Number: 71700
S-05396鈥擱ev. A, 21-Jan-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.75
Maximum
18
50
2.1
Unit
_C/W
1

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