SUV85N03-04P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
FEATURES
r
DS(on)
(W)
I
D
(A)
a
85
a
85
a
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
0.0043 @ V
GS
= 10 V
0.007 @ V
GS
= 4.5 V
APPLICATIONS
D
Secondary Side DC/DC
TO-262
D
1
2 3
G
G
D S
S
Top View
SUV85N03-04P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
85
a
85
a
240
75
280
166
c
3.75
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount
d
Junction-to-Ambient
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 72088
S-22245鈥擱ev. A, 25-Nov-02
www.vishay.com
Free Air
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.9
Unit
_C/W
C/W
1
1
2
3
4
5
