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SUU50N03-10P Datasheet

  • SUU50N03-10P

  • N-Channel 30-V 175C MOSFET PWM Optimized

  • 69.61KB

  • 4頁(yè)

  • VISHAY   VISHAY

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SUU50N03-10P
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(鈩?
0.010 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
I
D
(A)
a
20
18
TO-251
D
G
and DRAIN-TAB
G D S
Top View
Order Number:
SUU50N03-10P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
T
C
= 25_C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 100_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
30
飴?0
20
14
100
20
71
b
8.3
a
--55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
鈮?/div>
10 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case
Notes:
a. Surface mounted on 1鈥?x 1鈥?FR4 Board, t
鈮?/div>
10 sec.
b. See SOA curve for voltage derating.
Document Number: 71296
S-01706鈥擱ev. A, 14-Aug-00
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.75
Maximum
18
50
2.1
Unit
_C/W
1

SUU50N03-10P 產(chǎn)品屬性

  • Vishay

  • MOSFET

  • N-Channel

  • 30 V

  • +/- 20 V

  • 25 A

  • 0.007 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-251

  • Tube

  • 20 ns

  • - 55 C

  • 8.3 W

  • 90 ns

  • 1000

  • TrenchFET

  • 33 ns

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