SUU15N15-95
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
FEATURES
I
D
(A)
15
15
r
DS(on)
(鈩?
0.095 @ V
GS
= 10 V
0.100 @ V
GS
= 6 V
D
TrenchFETr Power MOSFETS
D
175_C Junction Temperature
D
100% R
g
Tested
APPLICATIONS
D
Primary Side Switch
D
TO-251
G
Drain Connected to Tab
G
D
S
S
Top View
Ordering Information: SUU15N15-95
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
鈮?/div>
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
P
D
T
J
, T
stg
T
C
= 25_C
T
C
= 125_C
I
D
I
DM
I
S
I
AR
E
AR
Symbol
V
DS
V
GS
Limit
150
飴?0
15
8.7
25
15
15
11.3
62
b
2.7a
--55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
J
ti t A bi t
Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1鈥?x1鈥?FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71670
S-31724鈥擱ev. B, 18-Aug-03
www.vishay.com
t
鈮?/div>
10 sec
Steady State
R
thJA
R
thJC
Symbol
Typical
16
45
2
Maximum
20
55
2.4
Unit
_C/W
C/
1
next