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SUR50N03-12P Datasheet

  • SUR50N03-12P

  • N-Channel 30-V (D-S) MOSFET

  • 4頁

  • VISHAY   VISHAY

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SUR50N03-12P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.012 @ V
GS
= 10 V
0.0175 @ V
GS
= 4.5 V
I
D
(A)
a
17.5
14.5
D
TrenchFETr Power MOSFET
D
PWM Optimized
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
鈭?/div>
High-Side, Desktop CPU Core
D
Synchronous Rectifiers
D
TO-252
Reverse Lead DPAK
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUR50N03-12P鈥擡3
SUR50N03-12P-T4鈥擡3 (altrenate tape orientation)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25_C
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
A
= 100_C
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
I
D
Symbol
V
DS
V
GS
Limit
30
"20
47
17.5
12.4
40
5
30
45
46.8
6.5
a
鈭?5
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 72774
S-32695鈥擱ev. A, 19-Jan-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
18
40
2.6
Maximum
23
50
3.2
Unit
_C/W
C/W
1

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