SUP/SUB85N10-10
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
100
r
DS(on)
(W)
0.0105 @ V
GS
= 10 V
0.012 @ V
GS
= 4.5 V
I
D
(A)
85
a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP85N10-10
D S
S
N-Channel MOSFET
Top View
SUB85N10-10
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
175 C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
100
"20
85
a
60
a
240
75
280
250
c
3.75
鈥?5 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 71141
S-00172鈥擱ev. A, 14-Feb-00
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
2-1