SUP/SUB75N06-12L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(W)
0.012 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
I
D
(A)
75
70
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP75N06-12L
SUB75N06-12L
N-Channel MOSFET
D S
Top View
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
P
D
T
J
, T
stg
Limit
60
"20
75
53
Unit
V
A
180
60
180
142
b
3.75
c
鈥?5 to 175
W
_C
mJ
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 70807
S-59182鈥擱ev. B, 07-Sep-98
www.vishay.com
S
FaxBack 408-970-5600
R
thJC
R
thJA
62.5
1.05
Symbol
Limit
40
Unit
_C/W
2-1